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A Wavelet Approach to Wafer Temperature Measurement via Diffuse Reflectance Spectroscopy

dc.contributor.authorKrishnaprasad, Perinkulam S.en_US
dc.contributor.authorKugarajah, Tharmarajahen_US
dc.contributor.authorDayawansa, Wijesuriya P.en_US
dc.date.accessioned2007-05-23T10:02:04Z
dc.date.available2007-05-23T10:02:04Z
dc.date.issued1996en_US
dc.identifier.urihttp://hdl.handle.net/1903/5779
dc.description.abstractA methodology for the determination of wafer temperature in Molecular Beam Epitaxy via diffuse reflectance measurements is developed. Approximate physical principles are not used, instead, patterns in the data (reflectance versus wavelength) are exploited via wavelet decomposition and Principal Component Analysis.en_US
dc.format.extent418094 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 1996-61en_US
dc.subjectsensingen_US
dc.subjectdata compressionen_US
dc.subjectimage processingen_US
dc.subjectfeature extractionen_US
dc.subjectsemiconductor processen_US
dc.subjectmonitoringen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleA Wavelet Approach to Wafer Temperature Measurement via Diffuse Reflectance Spectroscopyen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


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