Now showing items 1-4 of 4
Influence of Gas Composition on Wafer Temperature Control in a Tungsten Chemical Vapor Deposition Reactor
Experimental measurements of wafer temperature in a single-wafer,lamp-heated CVD system were used to study the wafer temperature responseto gas composition. A physically based simulation procedure for theprocess gas and ...
Model Reduction for RTCVD Optimization
A model of a three-zone Rapid Thermal Chemical Vapor Deposition (RTCVD) system is developed to study the effects of spatial wafer temperature patterns on polysilicon deposition uniformity. A sequence of simulated runs is ...
A Collocation/Quadrature-Based Sturm-Liouville Problem Solver
We present a computational method for solving a class of boundary-value problemsin Sturm-Liouville form. The algorithms are based on global polynomialcollocation methods and produce discrete representationsof the eigenfunctions. ...
A Computational Framework for Boundary-Value Problem Based Simulations
A framework is presented for step-by-step implementation of weighted-residualmethods (MWR) for simulations that require the solution ofboundary-value problems. A set of Matlab-based functions ofthe computationally common ...