Piezoelectric MEMS Disk Resonator and Filter Based on Epitaxial Al0.3Ga0.7As Films

Abstract

In this work, a new class of disk, contour-mode, piezoelectric, micromechanical resonators based on single-crystal Al0.3Ga0.7As films has been developed. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wave length of the desired resonance frequency. The resonators are designed with supports to emulate free-free boundary conditions. Finite element analysis (FEA) model for this resonator is created in Ansys software, the simulation results validate the design concept. The performance parameters extracted from the FEA models show that this novel disk resonator outperforms the beam type counterpart. A unique 7-mask MEMS fabrication process based on the epitaxial, heterostructure Al0.3Ga0.7As films has been developed and successfully implemented to produce the prototypes of the new disk resonators. Fully experimental characterizations on the prototypes were conducted and the measured results from the prototypes are: a Q factor of 7031 at 30.2 MHz with 1.11 kΩ intrinsic motional resistance; a Q factor of 6515 at 40.8 MHz with 1.26 kΩ intrinsic motional resistance; a Q factor of 3300 at 62.3 MHz with 2.43 kΩ intrinsic motional resistance. The measured power handling level is about 1.6 mW, which is the highest power handling capability to date. These measured performance aspects are better than that of the previously developed beam type resonators.

Based on this new disk resonator, two novel, two-port resonators (i.e., filters) designs have been introduced. The FEA models of both designs were created and the simulation results verify these design concepts. Equivalent circuit models for these filters were established with the parameters obtained from the FEA models. Furthermore, the optimal electrode configuration to provide minimum insertion loss is obtained through the analytical transadmittance function of the equivalent circuit. The prototypes of the filters were successfully fabricated. Measured results on these prototypes are summarized here: for the circular patter design, the best insertion loss is -45.7 dB at 37.8 MHz with quality factor 4372; for the half plane electrode design, the best insertion loss is -42.8 dB at 38.1 MHz with quality factor 3632.