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ATOMICALLY PRECISE FABRICATION AND CHARACTERIZATION OF DONOR-BASED QUANTUM DEVICES IN SILICON

dc.contributor.advisorSilver, Richard Men_US
dc.contributor.advisorAppelbaum, Ianen_US
dc.contributor.authorWang, Xiqiaoen_US
dc.date.accessioned2019-09-27T05:37:30Z
dc.date.available2019-09-27T05:37:30Z
dc.date.issued2019en_US
dc.identifierhttps://doi.org/10.13016/3vxb-g1dy
dc.identifier.urihttp://hdl.handle.net/1903/25017
dc.description.abstractAtomically precise donor-based quantum devices in silicon are a promising candidate for scalable solid-state quantum computing and analog quantum simulation. This thesis demonstrates success in fabricating state-of-the-art silicon-phosphorus (Si:P) quantum devices with atomic precision. We present critical advances towards fabricating high-fidelity qubit circuitry for scalable quantum information processing that demands unprecedented precision and reproducibility to control and characterize precisely placed donors, electrodes, and the quantum interactions between them. We present an optimized atomically precise fabrication scheme with improved process control strategies to encapsulate scanning tunneling microscope (STM)-patterned devices and technological advancements in device registration and electrical contact formation that drastically increase the yield of atomic-precision fabrication. We present an atomic-scale characterization of monolayer step edges on Si (100) surfaces using spatially resolved scanning tunneling spectroscopy and quantitatively determine the impact of step edge density of states on the local electrostatic environment. Utilizing local band bending corrections, we report a significant band gap narrowing behavior along rebonded SB step edges on a degenerately boron-doped Si substrate. We quantify and control atomic-scale dopant movement and electrical activation in silicon phosphorus (Si:P) monolayers using room-temperature grown locking layers (LL), sputter profiling simulation, and magnetotransport measurements. We explore the impact of LL growth conditions on dopant confinement and show that the dopant segregation length can be suppressed below one Si lattice constant while maintaining good epitaxy. We demonstrate weak-localization measurement as a high-resolution, high-throughput, and non-destructive method in determining the conducting layer thickness in the sub-nanometer thickness regime. Finally, we present atomic-scale control of tunnel coupling using STM-patterned Si:P single electron transistors (SET). We demonstrate the exponential scaling of tunnel coupling down to the atomic limit by utilizing the Si (100) 2×1 surface reconstruction lattice as a natural ruler with atomic-accuracy and varying the number of lattices counts in the tunnel gaps. We analyze resonant tunneling spectroscopy through atomically precise tunnel gaps as we scale the SET islands down to the few-donor quantum dot regime. Finally, by combining single/few-donor quantum dots with atomically defined single electron transistors as charge sensors, we demonstrate single electron charge sensing in few-donor quantum dots and characterize the tunnel coupling between few-donor quantum dots and precision-aligned single electron charge sensors.en_US
dc.language.isoenen_US
dc.titleATOMICALLY PRECISE FABRICATION AND CHARACTERIZATION OF DONOR-BASED QUANTUM DEVICES IN SILICONen_US
dc.typeDissertationen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.contributor.departmentChemical Physicsen_US
dc.subject.pqcontrolledQuantum physicsen_US
dc.subject.pqcontrolledNanotechnologyen_US
dc.subject.pqcontrolledCondensed matter physicsen_US
dc.subject.pquncontrolledatomic precisionen_US
dc.subject.pquncontrolledAtomic-scaleen_US
dc.subject.pquncontrolleddonoren_US
dc.subject.pquncontrolledquantum devicesen_US
dc.subject.pquncontrolledscanning tunneling microscopeen_US
dc.subject.pquncontrolledsiliconen_US


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