Theses and Dissertations from UMD
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New submissions to the thesis/dissertation collections are added automatically as they are received from the Graduate School. Currently, the Graduate School deposits all theses and dissertations from a given semester after the official graduation date. This means that there may be up to a 4 month delay in the appearance of a give thesis/dissertation in DRUM
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Item Novel Approaches to Control Surface Reactions in Plasma Etching of Electronic Materials(2019) Li, Chen; Oehrlein, Gottlieb S; Physics; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)Advanced semiconductor manufacturing requires precise plasma etching control for patterning complex semiconductor device structures. Pattern transfer into dielectric materials is one of the most frequently performed operation and traditionally done using continuous wave (CW) plasma etching processes based on fluorocarbon (FC) chemistries. Such etching methods are facing challenges when the critical dimension (CD) approach 10 nm. Issues include low materials etching selectivity, surface damage, roughness, and poor etching profile control. In this work, various aspects of low temperature plasma-based etching approaches are tailored for optimal plasma etching performance, including novel gaseous precursors for better control of gas phase and surface processes, tailoring the relative importance of radicals and ion bombardment at surface by sequential processes, and a new way to input energy to surfaces to stimulate etching reactions. We systematically studied the impact of molecular structure parameters of hydrofluorocarbon (HFC) precursors on plasma deposition of fluorocarbon (FC) and material etching performance. The HFC chemical composition and molecular structure such as ring structure, C=C, C≡C, C-O, C-H and degree of unsaturation have dramatic impacts on FC surface polymerization and material etching performance. Further, we report a new atomic layer etching (ALE) technique which temporally separates chemical reactant supply to a surface from ion bombardment induced etching. By this ALE method, the ion bombardment energy can be reduced to ensure low substrate damage and extremely high etching selectivity of two materials. Finally, we developed a hollow cathode electron beam etching system to reduce the energy and momentum input on the material surface by utilizing an electron-radical synergy effect. This present work has unveiled highly promising elements of a new roadmap of next generation semiconductor etching approaches and is expected to impact multiple areas of nanoscience and technology, including plasma etching of post-silicon materials. The use of specially selected gaseous precursor chemistry, temporal separation of radical exposure and energy-induced etching, and finally using electron bombardment for activation of surface etching, challenge our current understanding of semiconductor plasma processing and presents an important step forward in terms of the further industrial development of these approaches.Item High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching(2016) Metzler, Dominik; Oehrlein, Gottlieb S; Material Science and Engineering; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)A basic requirement of a plasma etching process is fidelity of the patterned organic materials. In photolithography, a He plasma pretreatment (PPT) based on high ultraviolet and vacuum ultraviolet (UV/VUV) exposure was shown to be successful for roughness reduction of 193nm photoresist (PR). Typical multilayer masks consist of many other organic masking materials in addition to 193nm PR. These materials vary significantly in UV/VUV sensitivity and show, therefore, a different response to the He PPT. A delamination of the nanometer-thin, ion-induced dense amorphous carbon (DAC) layer was observed. Extensive He PPT exposure produces volatile species through UV/VUV induced scissioning. These species are trapped underneath the DAC layer in a subsequent plasma etch (PE), causing a loss of adhesion. Next to stabilizing organic materials, the major goals of this work included to establish and evaluate a cyclic fluorocarbon (FC) based approach for atomic layer etching (ALE) of SiO2 and Si; to characterize the mechanisms involved; and to evaluate the impact of processing parameters. Periodic, short precursor injections allow precise deposition of thin FC films. These films limit the amount of available chemical etchant during subsequent low energy, plasma-based Ar+ ion bombardment, resulting in strongly time-dependent etch rates. In situ ellipsometry showcased the self-limited etching. X-ray photoelectron spectroscopy (XPS) confirms FC film deposition and mixing with the substrate. The cyclic ALE approach is also able to precisely etch Si substrates. A reduced time-dependent etching is seen for Si, likely based on a lower physical sputtering energy threshold. A fluorinated, oxidized surface layer is present during ALE of Si and greatly influences the etch behavior. A reaction of the precursor with the fluorinated substrate upon precursor injection was observed and characterized. The cyclic ALE approach is transferred to a manufacturing scale reactor at IBM Research. Ensuring the transferability to industrial device patterning is crucial for the application of ALE. In addition to device patterning, the cyclic ALE process is employed for oxide removal from Si and SiGe surfaces with the goal of minimal substrate damage and surface residues. The ALE process developed for SiO2 and Si etching did not remove native oxide at the level required. Optimizing the process enabled strong O removal from the surface. Subsequent 90% H2/Ar plasma allow for removal of C and F residues.